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The spin dependent transport across ferromagnet/semiconductor interfaces depends critically on their structure and electronic properties.Interracial reactions,the formation of non-magnetic interlayers,and conductivity mismatch have been attributed to low spin injection efficiency.In the case of Fe3Ga/GaAs(001)interfaces,the interface reconstruction was found to depend on the GaAs(001)surface reconstruction and the Fe3Ga growth conditions.Record high spin accumulation at Co2MnSi Heusler compound/GaAs(001)interfaces in lateral spin transport device structures have been measured.