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本文叙述了原料纯度对ZnSe外延膜的发光和电学性能的影响。随原料纯度提高,ZnSe外延膜的电阻率增大,同时PL光谱中与自由激子发射有关的E_s带不断增强。这就表明,在我们实验条件下,ZnSe外延层的电导载流子主要来自于原料中施主杂质的污染而不是本征施主,当衬底温度较低时,原料中施主杂质的污染要比衬底中的Ga自扩散重要得多。随着原料纯度的提高,ZnSe外延膜电阻率增加,正是由于原料中施主杂质的减少。
This article describes the effect of the purity of the raw materials on the luminescence and electrical properties of ZnSe epitaxial films. With the increase of purity of the raw materials, the resistivity of the ZnSe epitaxial film increases, meanwhile the E_s band associated with free exciton emission in the PL spectrum increases continuously. This shows that under our experimental conditions, the conductivity carriers of the ZnSe epitaxial layer mainly come from the contamination of the donor impurity in the material rather than the intrinsic donor. When the substrate temperature is low, the impurity of the donor impurity in the material is more contaminated than that of the liner The bottom Ga diffusion is much more important. As the purity of the raw material increases, the resistivity of the ZnSe epitaxial film increases, precisely because of the reduction of donor impurities in the raw material.