In the paper,the different technical parameter of (100)-oriented diamond film deposit is researched.We have deposited the (100)-oriented diamond films on the silicon substrates by the microwave plasma equipment,from a gas mixture of methane and hydrogen.The surface morphologies and quality of samples and so on are observed with scanning electron microscopy (SEM) and Roman spectrum and so on respectively.The experimental results show that when with the proper technical parameter,we can grow the high quality diamond films with low limitation and slippy and compact surface.