Two-dimensional(2D)systems are now widely investigated due to the promising properties for next-generation nanoelectronics[1].Taking advantage of the mature Si-based devices,design and fabrication of 2D lattices on Si substrate becomes a new inspiring feld.In this work,Highly ordered 2D Au network was globally achieved by the deposition of 0.8 ML Au atoms on clean Si(111)-7×7 surface at room temperature.Refection high-energy electron diffraction(RHEED)analysis combined with scanning tunneling microscopy(STM)images reveal that the 2D Au lattices composes two interfacial distinct layers.Au atoms in second layer are directly located on top of the frst Au-Si layer,forming the close-packed structure.A unique wide band gap up to 4.0 eV was detected by scanning tunneling spectrum(STS).The bias-dependent STM images and theoretical results show an interesting “kagome-like” distribution of coupling electronic states,which suggests that the energy gap is not only related to the local electronic structure,by also modulated by the carriers transport preference in the 2D lattices.The transport preference determined both by the carrier energy and symmetry of 2D lattices,that is,at lower voltage region,the transport behavior is blocked,and at higher voltage region,carriers spread out with a sixfold symmetric route,consistent with the sixfold network structure of the 2D Au lattices.