Non-volitile Memory Device using Metal-Insulator Transition of Single VO2 Nanowire

来源 :The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会) | 被引量 : 0次 | 上传用户:jokylin1
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
  VO2 which shows Metal-insulator transition near room temperature(Tc=68℃)possesses unique electrical and optical properties,leading to a wide variety of applications,including all-optical switches,electro-optical switches,smart windows,and memristor devices.Memristors are passive circuit elements which behave as resistors with memory; the resistance state may depend on other state variables,such as temperature,structural properties,electrical bias,etc.The memristor device that using the VO2 thin film has been reported.
其他文献
  Rare-earth hafnate(RE2Hf2O7)have been attracted much attention due to their various interesting applications such as fast-ion conductors,photocatalysts,ther
会议
  The yellow-orange emitting Y3Al5-x(Si/B)xO12-xNx:Ce3+ oxynitride phosphors were synthesized by a simple gas pressure sintering(GPS)process.The effect of Si4
会议
目前高精度的海空重力仪只有美、德等极少数国家能够研制和生产,我国这方面的应用需求几乎全依赖于进口而且美国政府严格限制该技术出口中国。研制国内具有自主产权的海空重力
  Al-doped SnO2 flower-like microspheres with hierarchical nanorods have been synthesized by hydrothermal method.The influences of alkaline concentration,hydr
会议
  Since high efficiency polycrystalline Nd:YAG ceramic laser was reported by the present author in 1995,various transparent ceramic laser materials such as Yb
会议
  The marked nonlinear voltage–current density(V–J)characteristics of zinc oxide(ZnO)varistors were appeared by addition of various kinds of additives,such
会议
为保障大坝的安全运营状态,需要根据已有的观测数据预测大坝未来的变形量。而目前对于大坝变形的预测方法较多,传统的预测方法存在预测过程复杂、速度慢、预测精度低等问题。基
昆虫是地球上种类最多的动物群体。与脊椎动物不同,昆虫没有获得性免疫,只能依靠自身的天然免疫抵御外界微生物的入侵。天然免疫是机体的第一道防线。微生物入侵时,一组种系
  Aluminum oxynitride spinel(A1ON)which exhibits excellent optical and mechanical properties has been obtained increased attention as leading candidate for tr
会议
  Spinel type Aluminum oxynitride(γ-alon)solid solution exists in the Al2O3-rich region in Al2O3-AlN systems.The first-principles calculations facilitate our
会议