CCD的特点是体积小、重量轻、微功耗、寿命长,并且性能稳定。依其用途不同,结构也各异,现以用于存象器(imager)的面沟道型CCD为例,简单介绍其工作原理(图1)。在p型(或n型)硅基片上生成一层SiO_2绝缘层,其上蒸镀一层铝,之后把铝层光刻成间距很小的栅电极。假如在某一栅电极上加上正电压,则在该栅电极下面的p型硅基片上形成一个耗尽层(也称“势阱”)。所加电压高低,决定了势阱的深浅,电压越高,势阱越深。负电荷一旦落入势阱,就被俘获而存贮其中。由于相 CCD is characterized by small size, light weight, micro-power consumption, long life, and stable performance. According to their different uses, the structure is also different, is now used for imager (imager) surface channel CCD as an example, a brief description of its working principle (Figure 1). A SiO 2 insulating layer is formed on a p-type (or n-type) silicon substrate, and an aluminum layer is deposited thereon, and then the aluminum layer is photolithographed into gate electrodes with a small pitch. If a positive voltage is applied to a gate electrode, a depletion layer (also called a “potential well”) is formed on the p-type silicon substrate under the gate electrode. The voltage applied to determine the depth of the potential well, the higher the voltage, the deeper the potential trap. Once the negative charge falls into the potential well, it is captured and stored. Due to the phase