Cu metallization by electrochemical deposition has been implemented in ULSI circuit fabrication for forming interconnects since 1998 . As wafer size increases f
Metal CMP,especially Cu/barrier CMP is widely used during semiconductor manufacturing process.To reach both proper removal rate and good dishing and erosion,one of
Through-silicon-via (TSV) interconnects can provide the shortest length and the highest density with significantly reduced signal delay and power consumption. F