Recently,3D device structure with high-k gate dielectric/metal gate (HKMG) such as Tri-Gate transistor for 22nm node technology was reported to enhance performance and lower power dissipation.
Molybdenum and its alloys are extensively utilized in thin film transistor industry for copper metallization because of their high thermal stability,good electrical conductivity and adhesion with glas
Source/drain (S/D) thermal formation is a strenuous issue on a single crystalline Si (s-Si) for the application of LCD and 3D integration because the minimum temperature required for S/D activation is
Hydrogen-free amorphous carbon (a-C) films were deposited by a high density plasma assisted sputtering source (HiPASS).The HiPASS transports a high density (>1013cm-3) Ar plasma from plasma source to
Electrochemical deposited nickel nanoparticles on nitrogen doped amorphous hydrogenated diamond-like carbon (N-DLC) film have displayed the catalytic function for glucose oxidation,which assumes the p
The continued growth in Information Technology industries has demanded the development of nonvolatile semiconductor memories (NVSM) for next generation.
Since the information-oriented society has come,the amount of information which each individual needs keeps rapidly increasing along with the smart devices.
In some application fields of carbon nanotubes (CNT),such as device interconnection,heat dissipation and electron emission devices,high conductivity at the interface of CNT and substrates is a crucial